Integrated circuit having a level shifter

ABSTRACT

An integrated circuit comprises a photodiode having a photodiode output, and a column line electrically coupled to the photodiode. A transfer transistor is electrically coupled to the photodiode and to the column line. A first reset transistor is electrically coupled to the photodiode and to the column line at a first node. The first node is between the transfer transistor and the column line. A second reset transistor is electrically coupled to the photodiode and to the column line at a second node. The second node is between the first node and the column line. A source follower transistor is electrically coupled to the photodiode and to the column line. The source follower transistor is between the second node and the column line. A level shifter is electrically coupled to the photodiode and to the column line. The level shifter is between the first node and the second node.

BACKGROUND

Device manufacturers are challenged to deliver quality integratedcircuits such as image sensors that consume a minimal amount of powerwhile offering maximum device performance.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a schematic diagram of an integrated circuit, in accordancewith one or more embodiments.

FIG. 2 is a schematic diagram of an integrated circuit, in accordancewith one or more embodiments.

FIG. 3 is a schematic diagram of an integrated circuit, in accordancewith one or more embodiments.

FIG. 4 is a schematic diagram of an integrated circuit, in accordancewith one or more embodiments.

FIG. 5 is a cross-section view of an integrated circuit, in accordancewith one or more embodiments.

FIG. 6 is a cross-section view of an integrated circuit, in accordancewith one or more embodiments.

FIG. 7 is a cross-section view of an integrated circuit, in accordancewith one or more embodiments.

FIG. 8 is a cross-section view of an integrated circuit, in accordancewith one or more embodiments.

FIG. 9 is a cross-section view of an integrated circuit, in accordancewith one or more embodiments.

FIG. 10 is a cross-section view of an integrated circuit, in accordancewith one or more embodiments.

FIG. 11 is a cross-section view an integrated circuit, in accordancewith one or more embodiments.

FIG. 12 is a cross-section view an integrated circuit, in accordancewith one or more embodiments.

FIG. 13 is a diagram of an array of integrated circuits, in accordancewith one or more embodiments.

FIG. 14 is a method of forming an integrated circuit, in accordance withone or more embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Active-pixel image sensors are often used in image devices such ascameras, video recorders, or other image capturing devices. Someactive-pixel sensors are formed of charge-coupled devices (CCDs). As analternative, active-pixel sensors are sometimes formed of photodiodesusing complementary metal-oxide-semiconductor (CMOS) processes.

CMOS image sensors are gaining in popularity over traditional CCDs dueto certain advantages inherent in CMOS image sensors. In particular,CMOS image sensors typically require lower voltages, consume less power,enable random access to image data, are capable of being fabricated withcompatible CMOS processes, and enable integrated single-chip cameras.Generally, CMOS image sensors utilize light-sensitive CMOS circuitry toconvert light energy into electrical energy. The light-sensitive CMOScircuitry typically includes a photodiode formed on a silicon substrate.As the photodiode is exposed to light, an electrical charge is inducedin the photodiode. The photodiode is typically coupled to a MOSswitching transistor, which is used to sample the charge of thephotodiode.

Typically, CMOS image sensors are fabricated utilizing a capacitancewithin the photodiode and a floating capacitance created betweentransistor connections. These capacitances, however, are characterizedby small capacitance values, which usually cause a high susceptibilityto noise and reduce the maximum of an output signal. Attempts have beenmade to increase the signal generated by a photodiode, but theseincrease the electrical charge generated by the photodiode and do notnecessarily increase the output signal. Furthermore, CMOS image sensorsare typically fabricated utilizing MOS transistors having a polysilicongate and silicon nitride spacers. This type of transistor, however,introduces a silicon surface trap and leakage issues. As a result, noiseon the output signal increases, as does a dark signal that, for example,occurs when no light is received by the image sensor.

CMOS image sensors are sometimes arranged as four transistor (4T)pixels. In 4T pixels, a collected photo charge is integrated on aphotodiode, but during readout, the charge is transferred to a floatingdiffusion node. A floating diffusion capacitance corresponding to thefloating diffusion node defines a charge to voltage conversion gain. Thecharge transfer in the 4T pixel transfers all charge, and thus does notintroduce noise. 4T pixels cancel reset noise by correlated doublesampling (CDS) without the need for an external memory. But, for acomplete charge transfer, the floating diffusion node needs to be set toa high voltage, which increases power consumption. For example, if aconventional 4T-type CMOS image sensor is used in an integrated circuit,to complete charge transfer from the photodiode, the floating diffusionnode is sometimes biased to have a high enough voltage, e.g., ˜3.0V, tocomplete the transfer. To realize a sufficient input dynamic range ofthe source follower transistor, the source follower power is also oftenbiased to have a high enough voltage (e.g., ˜3.0V). Dynamic range is theratio between the smallest and largest possible values read out from animage sensor. The higher the dynamic range of a pixel, the greater thesignal resolution is (assuming fixed minimum and maximum detectablelight levels). Dynamic range is related to the signal-to-noise ratio ofthe pixel.

FIG. 1 is a schematic diagram of an integrated circuit 100 that makes itpossible to reduce a gate voltage of a source follower transistor, whichin turn makes it possible to reduce power consumption, in accordancewith one or more embodiments.

Integrated circuit 100 is an image sensor that comprises a photodiode101 configured to sense light L and to generate a current from thesensed light L. In some embodiments, the integrated circuit 100 is, orcomprises, a pixel structure. The photodiode 101 has a photodiode output103 that is electrically coupled to a column line 105. A transfertransistor 107 is between the photodiode output 103 and the column line105. The transfer transistor 107 has a transfer transistor gate, atransfer transistor input and a transfer transistor output.

A first reset transistor 109 is between the photodiode output 103 andthe column line 105. The first reset transistor 109 has a first resettransistor gate, a first reset transistor input and a first resettransistor output. A second reset transistor 111 is between thephotodiode output 103 and the column line 105. The second resettransistor 111 has a second reset transistor gate, a second resettransistor input and a second reset transistor output. A source followertransistor 113 is between the photodiode output 103 and the column line105. The source follower transistor 113 has a source follower gate, asource follower input and a source follower output. A select transistor115 is between the source follower output and the column line 105. Theselect transistor 115 has a select transistor gate, a select transistorinput and a select transistor output. In some embodiments, the sourcefollower transistor 113 is, or is a part of, an amplifier.

A level shifter 117 is between the photodiode output 103 and the sourcefollower input of the source follower transistor 113. In someembodiments, the level shifter 117 is a passive level shifter that is orcomprises a capacitor. In some embodiments the capacitor of the levelshifter 117 is a metal-oxide-metal capacitor. In other embodiments, thecapacitor of the level shifter 117 is a metal-insulator-metal capacitor.

In some embodiments, one or more of the first reset transistor 109, thesecond reset transistor 111, the source follower transistor 113 or theselect transistor 115 are PMOS transistors. In other embodiments, one ormore of the first reset transistor 109, the second reset transistor 111,the source follower transistor 113 or the select transistor 115 are NMOStransistors.

Circuit elements such as the photodiode 101, column line 105, transfertransistor 107, first reset transistor 109, second reset transistor 111,source follower transistor 113, select transistor 115 and level shifter117 are electrically coupled to one another by way of a series ofelectrical connections 118 such as one or more of the other circuitelements, metal interconnects, metal contacts, metal pads, variousnodes, or other suitable circuitry that comprises a conductive materialthat makes it possible to electrically connect one or more circuitelements. In some embodiments, circuit elements and/or the electricalconnections are formed, for example, inside, under, or over, adielectric layer and/or a passivation layer on a substrate. If thesource follower transistor 113 is a PMOS transistor, electricalconnection 118 a is optionally excluded from integrated circuit 100.

The transfer transistor 107 is electrically coupled to the photodiode101 and to the column line 105 between the photodiode output 103 and thecolumn line 105. The first reset transistor 109 is electrically coupledto the photodiode 101 and to the column line 105 at a first node 119.The first node 119 is between the transfer transistor 107 and the columnline 105. The second reset transistor 111 is electrically coupled to thephotodiode 101 and to the column line 105 at a second node 121. Thefirst node 119 and the second node 121 are floating diffusion nodes. Thesecond node 121 is between the first node 119 and the column line 105.The source follower transistor 113 is electrically coupled to thephotodiode 101 and to the column line 105 between the second node 121and the column line 105. The level shifter 117 is electrically coupledto the photodiode 101 and to the column line 105 between the first node119 and the second node 121.

In use, a first logic high signal 123 is applied to the gate of thetransfer transistor 107 or to the gate of the first reset transistor109, and a second logic high signal 125 is applied to the selecttransistor 115 or to the second reset transistor 111. To reset the firstnode 119 and the second node 121, the first logic high signal 123 isapplied to the gate of the first reset transistor 109, turning on thefirst reset transistor 109, and the second logic high signal 125 isapplied to the gate of the second reset transistor 111, turning on thesecond reset transistor 111. In a light sensing operation, the firstlogic high signal 123 is applied to the gate of the transfer transistor107, turning on the transfer transistor 107, and the second logic highsignal 125 is applied to the gate of select transistor 115, turning onthe select transistor 115.

If the first logic high signal 123 is applied to the gate of the firstreset transistor 109, photodiode 101 is reverse-biased by a first powersupply voltage Vdd_1. Under the reverse bias by first power supplyvoltage Vdd_1, a depletion region within the photodiode 101 isgenerated. Accordingly, photodiode 101 acts as a capacitor that ischarged by first power supply voltage Vdd_1. First node 119 is thuscharged to a first high voltage by the first power supply voltage Vdd_1.The first reset transistor 109 is then turned off by ceasing theapplication of the first logic high signal 123 to the gate of the firstreset transistor 109, and the first charges are stored at first node119. Level shifter 117 is also charged by first power supply voltageVdd_1 such that a charge is stored at the level shifter 117.

If the second logic high signal 125 is applied to the gate of the secondreset transistor 111, second node 121 is charged to a second highvoltage by a second power supply voltage Vdd_2. The second resettransistor 111 is then turned off by ceasing the application of thesecond logic high signal 125 to the gate of the second reset transistor111, and the second charge is stored at second node 121.

During the light sensing operation, the first logic high signal 123 isapplied to the gate of the transfer transistor 107, and the photodiode101 may or may not be exposed to light L. If photodiode 101 is exposedto light L, electron-hole pairs are generated in the depletion regionwithin the photodiode 101. The first charge stored at the first node 119is thus discharged to the ground by a current flowing through photodiode101, and the voltage at first node 119 is brought down. If, however,photodiode 101 is not exposed to light L, no electron-hole pair isgenerated in the depletion region within the photodiode 101, and thefirst charge stored at first node 119 remains. Accordingly, the voltageat first node 119 is higher if the photodiode 101 is not exposed tolight L than if photodiode 101 is exposed to light L. If a voltagedifference is determined to exist at the first node 119, between a firstvoltage determination at the first node 119 and a second voltagedetermination at the first node 119, this voltage difference is capableof being used to determine whether the photodiode 101 is exposed tolight L or not.

Similarly, the second charge stored at the second node 121 is dischargedto the ground by the current flowing through photodiode 101, and thevoltage at second node 121 is brought down. If, however, photodiode 101is not exposed to light L, no electron-hole pair is generated in thedepletion region within the photodiode 101, and the second charge storedat second node 121 remains. Accordingly, the voltage at second node 121is higher if the photodiode 101 is not exposed to light L than ifphotodiode 101 is exposed to light L. If a voltage difference isdetermined to exist at the second node 121, between a first voltagedetermination at the second node 121 and a second voltage determinationat the second node 121, this voltage difference is capable of being usedto determine whether the photodiode 101 is exposed to light L or not.

The first charges at first node 119 and the level shifter 117, and thesecond charges at the second node 121, affect the operation of sourcefollower transistor 113, which acts as an amplifier amplifying the stateat second node 121 without draining the charges at the second node 121.If photodiode 101 is exposed to light L, the voltage at the selecttransistor input of the select transistor 115 will be lower than thevoltage at the second node 121. If the photodiode 101 is not exposed tolight L, then the voltage at the select transistor input of the selecttransistor 115 will be higher than the voltage at the second node 121.

During the light sensing operation, the second logic high signal 125 isapplied to the gate of the select transistor 115, and the selecttransistor 115 is turned on to connect the select transistor input ofthe select transistor 115 to the column line 105. Accordingly, thevoltage at the column line 105 is the voltage at the select transistoroutput of the select transistor 115, which indicates whether photodiode101 is exposed to light L or not. The voltage of the select transistor115 output is about the same as the select transistor 115 input, whichis about the same as the source follower transistor 113 output.

The level shifter 117 makes it possible for the second power supplyvoltage Vdd_2 to be less than the first power supply voltage Vdd_1,which reduces an overall power consumption of the integrated circuit100. The second power supply voltage Vdd_2 is capable of being less thanthe first power supply voltage Vdd_1, because the level shifter 117 isconfigured to store a charge that makes it possible for the sourcefollower transistor 113 to be powered by a lower supply voltage ascompared to the first reset transistor 109.

For example, if the first logic high signal 123 ranges between 0V and5V, the first power supply voltage Vdd_1 corresponds to the first logichigh signal 123 and supplied a first power supply voltage Vdd_1 that is5V. But, because the level shifter 117 stores a charge that makes itpossible for the source follower transistor 113 to be powered by a lowersupply voltage, the second logic high signal 125 is sufficient, forexample, in a range of about 0V to about 1.2V volts, and the secondsupply voltage Vdd_2 is sufficient, for example, to supply a voltage ofabout 1.2V.

Because the second power supply voltage Vdd_2 is capable of being lessthan the first power supply voltage Vdd_1, the source followertransistor 113 is capable of consuming less power than if the sourcefollower transistor 113 were supplied the same power supply voltage asthe first reset transistor 109. In some embodiments, the overall powerconsumption of the integrated circuit 100 is proportionally related tothe power supplied to the source follower transistor 113. Further, withthe first power supply voltage Vdd_1 being allowed to remain higher thanthe second power supply voltage Vdd_2, the first node 119 is charged toa higher voltage than that which is supplied to the source followertransistor 113, which makes it possible to complete the charge transferwhile consumes less power overall.

Additionally, if the first power supply voltage Vdd_1 is greater thanthe second power supply voltage Vdd_2, meaning that the charge stored atthe first node 119 is greater than the voltage supplied to the sourcefollower transistor 113, then the integrated circuit 100 will have anincreased full well capacity.

In some embodiments, the first node 119 has a corresponding firstfloating diffusion node capacitance Cfd1 and the second node 121 has acorresponding second floating diffusion node capacitance Cfd2. A signallevel is determinable at each of the first node 119, the second node121, and the source follower output of the source follower transistor113 which are determinable as indicated in Table 1-1. The determinablesignal level is based, at least in part, on a number of signal electronsQpd at the photodiode 101 after the charges at the first node 119 andthe second node 121 are reset, and after the first logic high signal 123is applied to the gate of the transfer transistor 107. The signal levelat the source follower output of the source follower transistor 113 isadditionally based on a transfer conductance Gsf and a predeterminedthreshold voltage Vth.

In Table 1-1, the first node 119 corresponds to FD1, second node 121corresponds to FD2, and the source follower output of the sourcefollower transistor 113 corresponds to SF out:

TABLE 1-1 Signal Electrons FD1 FD2 SF out After Reset 0 Vdd_1 Vdd_2 Gsf× Vdd_2 − Vth After Transfer Qpd Vdd_1 − Vdd_2 − Gsf × (Vdd_2 − dV1 dV2DV2) − VthThe following formulas are used to determine the values included inTable 1-1:

$\begin{matrix}{{{dV}\; 1} = {\frac{Qpd}{{{{Cfd}\; 1} + {Cb}}//{{Cfd}\; 2}}\mspace{400mu} (1)}} \\{{\frac{Qpd}{{{Cfd}\; 1} + {{kCfd}\; 2}} (2)}}\end{matrix}$$k = {\frac{1}{1 + {{Cfd}\; {2/{Cb}}}}\mspace{495mu} (3)}$${{dV}\; 2} = {\frac{kQpd}{{{Cfd}\; 1} + {{kCfd}\; 2}}\mspace{455mu} (4)}$

After the charges at the first node 119 and the second node 121 arereset, but before the first logic high signal 123 is applied to the gateof the transfer transistor 107, the signal level is 0, because there areno signal electrons flowing from the photodiode 101 and/or the transfertransistor 107 to the first node 119, the second node 121, or the sourcefollower output of the source follower transistor 113. But when thefirst logic high signal 123 is applied to the gate of the transfertransistor 107, the signal electrons flowing from the photodiode 101and/or the transfer transistor 107 is Qpd.

The largest charge that can be stored in the photodiode 101 is the fullwell capacity or maximum full well capacity (MFWC), which is given by:

Q=CV  (5)

The photodiode capacitance C, which is one or more of the capacitance ofthe photodiode 101, the first floating diffusion capacitance Cfd1, orthe second floating diffusion capacitance Cfd2, individual or combined,is fixed and includes parasitic capacitance values of parasiticcapacitances that could exist among the circuit components of integratedcircuit 100 based on the proximity of the various circuit components ofthe integrated circuit 100 to one another. The voltage V is defined bythe reset level, for example first power supply voltage Vdd_1.Accordingly, because the full well capacity of the photodiode 101 isproportional to the magnitude of first power supply voltage Vdd_1, asthe first power supply voltage Vdd_1 increases, the full well capacityincreased. But because the integrated circuit 100 includes the levelshifter 117 between the first node 119 and the second node 121, secondpower supply voltage Vdd_2 is less than the voltage level as the firstpower supply voltage Vdd_1, which makes it possible to increase fullwell capacity of the photodiode 101 without increasing power consumptionof the integrated circuit 100, or at least while limiting the amount ofpower consumed.

The transfer transistor gate of the transfer transistor 107, the firstreset transistor gate of the first reset transistor 109, the secondreset transistor gate of the second reset transistor 111, the sourcefollower gate of the source follower transistor 113, and the selecttransistor gate of the select transistor 115 have gate oxides. The gateoxides of the transistors included in the integrated circuit 100 havecorresponding gate oxide thicknesses. In some embodiments, the gateoxide thicknesses of the various transistor gates are the same. In otherembodiments, at least the gate oxide thickness of the source followergate of the source follower transistor 113 is less than one or more ofthe gate oxide thickness of the transfer transistor gate of the transfertransistor 107 or the gate oxide thickness of the first reset transistorgate of the first reset transistor 109. Because integrated circuit 100makes it possible to reduce the overall power consumed by the integratedcircuit 100, at least the thickness of the source follower gate oxide iscapable of being reduced compared to the thicknesses of the gate oxidesof the other transistors included in integrated circuit 100. A reductionin overall power consumption, or at least a reduction in the magnitudeof power supply voltage supplied to the source follower transistor 113,allows for a reduction in the gate oxide thickness of the sourcefollower transistor 113, which increases transfer conductance Gsf for agiven current and transistor size. The reduction in gate oxide thicknessof at least the source follower transistor 113 makes it possible toreduce the settling time of the source follower transistor 113, therebyimproving device performance.

FIG. 2 is a schematic diagram of integrated circuit 100, in accordancewith one or more embodiments. In some embodiments, the integratedcircuit 100 comprises, or is formed on, either a first substrate 201, orthe first substrate 201 and a second substrate 203 that is separate fromthe first substrate 201. The first substrate 201 and/or the secondsubstrate 203 comprise silicon, glass, a polymer, or other suitablematerial upon which an integrated circuit such as integrated circuit 100is capably formed.

In some embodiments, the first substrate 201 is over the secondsubstrate 203. In other embodiments, the second substrate 203 is overthe first substrate 201. In further embodiments, the first substrate 201and the second substrate 203 are side-by-side on a same or a differentlevel with respect to one another.

In this embodiment, the photodiode 101 and the transfer transistor 107are on the first substrate 201. The column line 105, the first resettransistor 109, the second reset transistor 111, the source followertransistor 113, the select transistor 115, and the level shifter 117 areon the second substrate 203. In some embodiments, the integrated circuit100 includes a first electrode 205 proximate a first edge 201 a of thefirst substrate 201, and a second electrode 207 proximate a second edge203 a of the second substrate 203. The photodiode 101 on the firstsubstrate 201 and the source follower transistor 113 on the secondsubstrate 203 are electrically coupled by way of the first electrode 205and the second electrode 207.

FIG. 3 is a schematic diagram of integrated circuit 100, in accordancewith one or more embodiments. In this embodiment, photodiode 101,transfer transistor 107, and first reset transistor 109 are on the firstsubstrate 201. The column line 105, second reset transistor 111, thesource follower transistor 113, the select transistor 115, and the levelshifter 117 are on the second substrate 203. In some embodiments, if thefirst reset transistor 109 is on the first substrate 201, then the levelshifter 117 is optionally on the first substrate 201 instead of thesecond substrate 203. The first electrode 205 is proximate the firstedge 201 a of the first substrate 201, and the second electrode 207 isproximate the second edge 203 a of the second substrate 203. Thephotodiode 101 on the first substrate 201 and the source followertransistor 113 on the second substrate 203 are electrically coupled byway of the first electrode 205 and the second electrode 207.

FIG. 4 is a schematic diagram of integrated circuit 100, in accordancewith one or more embodiments. In this embodiment, photodiode 101,transfer transistor 107, and first reset transistor 109 are on the firstsubstrate 201. The column line 105, second reset transistor 111, thesource follower transistor 113, and the select transistor 115 are on thesecond substrate 203. The first electrode 205 is proximate the firstedge 201 a of the first substrate 201, and the second electrode 207 isproximate the second edge 203 a of the second substrate 203. Thephotodiode 101 on the first substrate 201 and the source followertransistor 113 on the second substrate 203 are electrically coupled byway of the first electrode 205 and the second electrode 207.

The first electrode 205 and the second electrode 207 are separated by apredetermined distance to form the capacitor of the level shifter 117. Acapacitance of the level shifter 117 is based, at least in part, on thedistance between the first electrode 205 and the second electrode 207.

FIG. 5 is a cross-section view of integrated circuit 100, in accordancewith one or more embodiments. In this embodiment, the integrated circuit100 is on or comprises first substrate 201. Integrated circuit 100, inthis example, is a backside illuminated image sensor in which photodiode101 is exposed to light L from a backside of first substrate 201.

The photodiode 101 is electrically coupled to the column line 105 by wayof the electrical connections 118 and the transfer transistor 107, thefirst reset transistor 109, the second reset transistor 111, the sourcefollower transistor 113, the select transistor 115 and the level shifter117 (in this example, the level shifter 117 comprises ametal-oxide-metal capacitor having a first metal line 117 a and a secondmetal line 117 b). In some embodiments, the first metal line 117 a andthe second metal line 117 b are distanced from the first substrate 201to minimize a parasitic capacitance that could exist between the levelshifter 117 and the other circuit elements of integrated circuit 100.

FIG. 6 is a cross-section view of integrated circuit 100, in accordancewith one or more embodiments. In this embodiment, the integrated circuit100 is on or comprises first substrate 201. Integrated circuit 100, inthis example, is a backside illuminated image sensor in which photodiode101 is exposed to light L from a backside of first substrate 201.

The photodiode 101 is electrically coupled to the column line 105 by wayof the electrical connections 118 and the transfer transistor 107, thefirst reset transistor 109, the second reset transistor 111, the sourcefollower transistor 113, the select transistor 115 and the level shifter117 (in this example, the level shifter 117 comprises ametal-insulator-metal capacitor having the first metal line 117 a andthe second metal line 117 b). In some embodiments, the first metal line117 a and the second metal line 117 b are distanced from the firstsubstrate 201 to minimize a parasitic capacitance that could existbetween the level shifter 117 and the other circuit elements ofintegrated circuit 100.

FIG. 7 is a cross-section view of integrated circuit 100, in accordancewith one or more embodiments. In this embodiment, the integrated circuit100 is on or comprises first substrate 201. Integrated circuit 100, inthis example, is a backside illuminated image sensor in which photodiode101 is exposed to light L from a backside of first substrate 201.

The photodiode 101 is electrically coupled to the column line 105 by wayof the electrical connections 118 and the transfer transistor 107, thefirst reset transistor 109, the second reset transistor 111, the sourcefollower transistor 113, the select transistor 115 and the level shifter117 (in this example, the level shifter 117 comprises ametal-insulator-metal capacitor having the first metal line 117 a andthe second metal line 117 b). In some embodiments, the first metal line117 a and the second metal line 117 b are distanced from the firstsubstrate 201 to minimize a parasitic capacitance that could existbetween the level shifter 117 and the other circuit elements ofintegrated circuit 100.

The transfer transistor 107 has a transistor gate oxide 701, the firstreset transistor 109 has a first reset transistor gate oxide 703, thesecond reset transistor 111 has a second reset transistor gate oxide705, the source follower transistor 113 has a source follower gate oxide707, and the select transistor 115 has a select transistor gate oxide709 (collectively referred to as gate oxides 701-709). Though notlimited to the embodiment illustrated in FIG. 7, because the integratedcircuit 100 makes it possible to reduce the overall power consumption ofthe integrated circuit 100 by providing level shifter 117 that makes itpossible to supply a lesser supply power voltage to the source followertransistor 113, at least the thickness of the source follower gate oxide707 is capable of being reduced compared to the thicknesses of the gateoxides 701-705 and 709 of the other transistors of the integratedcircuit 100. In this embodiment, the gate oxide thicknesses of gateoxides 705, 707 and 709 is less than the gate oxide thicknesses of gateoxides 701 and 703. In other embodiments, a different combination ofgate oxide thicknesses is possible. For example, some of the gate oxidethicknesses 701-709 are the same while other gate oxide thicknesses701-709 are different. In some embodiments, the gate oxide thicknesses701-709 are the same, however.

FIG. 8 is a cross-section view of integrated circuit 100, in accordancewith one or more embodiments. In this embodiment, the integrated circuit100 comprises, or is formed on, the first substrate 201 and the secondsubstrate 203. The first substrate 201 is over the second substrate 203,making the integrated circuit 100 a top side illuminated image sensor.In other embodiments, the second substrate 203 is over the firstsubstrate 201 making the integrated circuit 100 a back-side illuminatedimage sensor.

In this embodiment, photodiode 101, transfer transistor 107, and firstreset transistor 109 are on the first substrate 201. The column line105, second reset transistor 111, the source follower transistor 113,the select transistor 115, and the level shifter 117 are on the secondsubstrate 203. In some embodiments, if the first reset transistor 109 ison the first substrate 201, then the level shifter is optionally on thefirst substrate 201 instead of the second substrate 203. The firstelectrode 205 is proximate the first edge 201 a of the first substrate201, and the second electrode 207 is proximate the second edge 203 a ofthe second substrate 203. The photodiode 101 on the first substrate 201and the source follower transistor 113 on the second substrate 203 areelectrically coupled by way of the first electrode 205 and the secondelectrode 207. Gate oxides 705-709 have thicknesses that are less thangate oxides 701 and 703. In some embodiments, the gate oxide thicknesses701-709 are the same, however.

FIG. 9 is a cross-section view of integrated circuit 100, in accordancewith one or more embodiments. In this embodiment, the integrated circuit100 comprises, or is formed on, the first substrate 201 and the secondsubstrate 203. The first substrate 201 is over the second substrate 203,making the integrated circuit 100 a top side illuminated image sensor.In other embodiments, the second substrate 203 is over the firstsubstrate 201 making the integrated circuit 100 a back-side illuminatedimage sensor.

In this embodiment, photodiode 101, transfer transistor 107, and firstreset transistor 109 are on the first substrate 201. The column line105, second reset transistor 111, the source follower transistor 113,and the select transistor 115 are on the second substrate 203. The firstelectrode 205 is proximate the first edge 201 a of the first substrate201, and the second electrode 207 is proximate the second edge 203 a ofthe second substrate 203. The photodiode 101 on the first substrate 201and the source follower transistor 113 on the second substrate 203 areelectrically coupled by way of the first electrode 205 and the secondelectrode 207. Gate oxides 705-709 have thicknesses that are less thangate oxides 701 and 703. In some embodiments, the gate oxide thicknesses701-709 are the same, however.

The first electrode 205 and the second electrode 207 are separated by apredetermined distance to form the capacitor of the level shifter 117. Acapacitance of the level shifter 117 is based, at least in part, on thedistance between the first electrode 205 and the second electrode 207.

FIG. 10 is a cross-section view of integrated circuit 100, in accordancewith one or more embodiments. In this embodiment, the integrated circuit100 comprises, or is formed on, the first substrate 201 and the secondsubstrate 203. The first substrate 201 is over the second substrate 203,making the integrated circuit 100 a top side illuminated image sensor.In other embodiments, the second substrate 203 is over the firstsubstrate 201 making the integrated circuit 100 a back-side illuminatedimage sensor.

In this embodiment, photodiode 101, transfer transistor 107, and firstreset transistor 109 are on the first substrate 201. The column line105, second reset transistor 111, the source follower transistor 113,and the select transistor 115 are on the second substrate 203. The firstelectrode 205 is proximate the first edge 201 a of the first substrate201, and the second electrode 207 is proximate the second edge 203 a ofthe second substrate 203. The photodiode 101 on the first substrate 201and the source follower transistor 113 on the second substrate 203 areelectrically coupled by way of the first electrode 205 and the secondelectrode 207.

The first electrode 205 and the second electrode 207 are separated by apredetermined distance to form the capacitor of the level shifter 117 ata bonding boundary 1001 between the first substrate 201 and the secondsubstrate 203. A capacitance of the level shifter 117 is based, at leastin part, on the distance between the first electrode 205 and the secondelectrode 207. In some embodiments, the first substrate 201 is bonded tothe second substrate 203 by a bonding agent 1003. In some embodiments,the bonding agent 1003 is one or more of an adhesive film, an epoxy, apolymer resin, or other suitable adhesive capable of bonding the firstsubstrate 201 and the second substrate 203 together. In someembodiments, a first portion of the integrated circuit 100 is formed onfirst substrate 201 and a second portion of the integrated circuit 100is formed on second substrate 203. The first portion of the integratedcircuit 100 is either flipped and bonded to the second portion of theintegrated circuit 100 or the second portion of the integrated circuit100 is flipped and bonded to the first portion of the integrated circuit100.

In some embodiments, integrated circuit 100 comprises one or moreinter-layer dielectric layers 1005 that comprise a silicon dioxide suchas undoped silica glass (USG), silicon nitride, silicon oxynitride,polyimide, spin-on glass (SOG), fluoride-doped silicate glass (FSG),carbon doped silicon oxide such as SiCOH, BLACK DIAMOND® (AppliedMaterials of Santa Clara, Calif.), XEROGEL®, AEROGEL®, amorphousfluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), SILK® (DowChemical, Midland, Mich.), and/or other suitable materials. Theinter-layer dielectric layers 1005 are formed by suitable technique suchas spin-on, CVD, sputtering, or other suitable processes. In someembodiments, plasma enhanced (PE) CVD is used to form silicon oxide fromsilane (SiH4) or tetraethoxysilane (TEOS). In other embodiments, ahigh-density plasma (HDP) CVD is used.

The series of electrical connections 118 (FIG. 1) that electricallycouple the circuit elements of the integrated circuit 100 comprisevarious interconnection structures 1007. The inter-layer dielectriclayers 1005 and the interconnection structures 1007 are formed, forexample, using a damascene process, such as a dual damascene process ora single damascene process. The interconnection structures 1007 arecoupled to the photodiode 101 and other circuit elements of theintegrated circuit 100. The interconnection structures 1007 comprisevarious metal features, and contact features configured between metallayers and the first substrate 201. The interconnection structures 1007further include vias between adjacent metal layers that couple theadjacent metal layers to one another. The interconnection structures1007 comprise one or more of copper, a copper alloy, titanium, titaniumnitride, tantalum, tantalum nitride, tungsten, polysilicon, metalsilicide, or another suitable material. Metal silicide includes, forexample, nickel silicide, cobalt silicide, tungsten silicide, tantalumsilicide, titanium silicide, platinum silicide, erbium silicide,palladium silicide, another suitable material, or combinations thereof.In some embodiments, the interconnection structures 1007 includesmultiple-layer structures, such as a barrier layer, a copper seed layer,and bulk copper. In some embodiments, a top metal layer includesaluminum and remaining metal layers include copper. The interconnectionstructures 1007 are formed by a technique such as chemical vapordeposition, physical vapor deposition (PVD or sputtering), plating,other suitable processes, or combinations thereof. In some embodiments,a PVD process is used to form a copper seed layer, and a plating processis used to deposit bulk copper for metal interconnections.

In some embodiments, the level shifter 117 is a MIM capacitor thatincludes the first electrode 205, the second electrode 207, and thebonding agent 1003. In some embodiments, the first electrode 205 and thesecond electrode 207 are conductive and comprise a conductive materialsuch as TiN, TaN, ruthenium, aluminum, tungsten, copper, or otherconductive material. The first electrode 205 and the second electrode207 are formed using, for example, a PVD, an ECP, or a CVD process. Insome embodiments, in addition to, or as an alternative to the bondingagent 1003, the MIM capacitor includes an oxide-containing film, ahigh-dielectric constant film, a nitride film, a BPSG film, a TEOSlayer, or other dielectric or insulating material to provide the spacingbetween the first electrode 205 and the second electrode 207 to form theMIM capacitor. The bonding agent 1003 or the other material between thefirst electrode 205 and the second electrode 207 is applied using one ormore of an electric furnace, a CVD method, or a PVD method.

FIG. 11 is a cross-section view of integrated circuit 100, in accordancewith one or more embodiments. In this embodiment, the first resettransistor 109 is on the first substrate 201 and the second resettransistor 111 is partially on the first substrate 201 and partially onthe second substrate 203 such that the portion of the second resettransistor 111 on the first substrate 201 is directly coupled to theportion of the second reset transistor 111 on the second substrate 203by an interconnection structure 1007.

FIG. 12 is a cross-section view of integrated circuit 100, in accordancewith one or more embodiments. In this embodiment, the first resettransistor 109 is partially on the first substrate 201 and partially onthe second substrate. The second reset transistor 111 is on the secondsubstrate 203. The portion of the first reset transistor 109 on thefirst substrate 201 is directly coupled to the portion of the firstreset transistor 109 on the second substrate 203 by an interconnectionstructure 1007. The first reset transistor 109, in this example, iselectrically coupled to the level shifter 117 on a first substrate 201side of the level shifter 117 and on a second substrate 203 side of thelevel shifter 117.

FIG. 13 is a diagram of an array of integrated circuits 1300, inaccordance with one or more embodiments. The array of integratedcircuits 1300 includes more than one integrated circuit 100 coupled tothe column line 105. The array of integrated circuits 1300 is atwo-dimensional array (2-D array) that is capable of including multiplecolumn lines 105 to which one or more integrated circuits 100 arecoupled. In some embodiments, the array of integrated circuit 1300 isformed over a single substrate 201 (FIG. 2), two substrates such assubstrate 201 and 203 (FIG. 2), or a different number of substrates thatare combined, joined or couple. For example, more than two substratesare optionally included in the array of integrated circuits 1300 if theindividual integrated circuits 100 are individually formed overrespective substrates 201 and 203, and the integrated circuits 100 andrespective column lines are joined or coupled with one another.

FIG. 14 is a flowchart of a method 1400 of forming integrated circuit100, in accordance with one or more embodiments. Method 1400 begins withstep 1401 in which photodiode 101 (FIG. 1) is formed on first substrate201 (FIG. 2). In step 1403, transfer transistor 107 (FIG. 1) is formedon the first substrate 201. In step 1405, first reset transistor 109(FIG. 1) is formed on the first substrate 201. In step 1407, secondreset transistor 111 (FIG. 1) is formed on the first substrate 201 orthe second substrate 203 (FIG. 2). In step 1409, the source followertransistor 113 is formed on the first substrate 201 or the secondsubstrate 203. In step 1411, the select transistor 115 is formed on thefirst substrate 201 or the second substrate 203. In step 1413, columnline 105 (FIG. 1) is formed on the first substrate 201 or the secondsubstrate 203. In step 1415, level shifter 117 (FIG. 1) is formed on thefirst substrate 201 or the second substrate 203. The level shifter 117is electrically coupled to the photodiode 101, the transfer transistor107, the first reset transistor 109, the second reset transistor 111,the source follower transistor 113, the select transistor 115, and thecolumn line 105 between the first reset transistor 109 and the secondreset transistor 111 by, for example, either direct interconnectionbetween the various circuit elements of the integrated circuit 100, orindirect interconnection such as by way of one or more electricalconnections 118 that are formed to couple the various circuit elementsof the integrated circuit 100. In some embodiments, the forming is ontwo or more substrates are described herein. In some embodiments, thetwo or more substrates are optionally bonded as described herein.

An aspect of this description relates to an integrated circuit thatcomprises a photodiode and a column line electrically coupled to thephotodiode. The photodiode has a photodiode output. A transfertransistor is electrically coupled to the photodiode and to the columnline. The transfer transistor is between the photodiode output and thecolumn line. A first reset transistor is electrically coupled to thephotodiode and to the column line at a first node. The first node isbetween the transfer transistor and the column line. A second resettransistor is electrically coupled to the photodiode and to the columnline at a second node. The second node is between the first node and thecolumn line. A source follower transistor is electrically coupled to thephotodiode and to the column line. The source follower transistor isbetween the second node and the column line. A level shifter iselectrically coupled to the photodiode and to the column line. The levelshifter is between the first node and the second node.

Another aspect of this description relates to an image sensor thatcomprises a first substrate and a second substrate. A photodiode is onthe first substrate. The photodiode has a photodiode output. A columnline is electrically coupled to the photodiode. A first transistor iselectrically coupled to the photodiode and to the column line. The firsttransistor is between the photodiode output and the column line. Asecond transistor is electrically coupled to the photodiode and to thecolumn line at a first node. The first node is between the firsttransistor and the column line. A third transistor is electricallycoupled to the photodiode and to the column line at a second node. Thesecond node is between the first node and the column line. A fourthtransistor is on the second substrate and is electrically coupled to thephotodiode and to the column line. The fourth transistor is between thesecond node and the column line. A capacitor is electrically coupled tothe photodiode and to the column line. The capacitor is between thefirst node and the second node.

A further aspect of this description relates to a method of forming animage sensor. The method comprises forming a photodiode. The photodiodehas a photodiode output. The method also comprises forming a column lineelectrically coupled to the photodiode. The method further comprisesforming a transfer transistor electrically coupled to the photodiode andto the column line. The transfer transistor is between the photodiodeoutput and the column line. The method additionally comprises forming afirst reset transistor electrically coupled to the photodiode and to thecolumn line at a first node. The first node is between the transfertransistor and the column line. The method also comprises forming asecond reset transistor electrically coupled to the photodiode and tothe column line at a second node. The second node is between the firstnode and the column line. The method further comprises forming a sourcefollower transistor electrically coupled to the photodiode and to thecolumn line. The source follower transistor is between the second nodeand the column line. The method additionally comprises forming a levelshifter electrically coupled to the photodiode and to the column line.The level shifter is between the first node and the second node.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. An integrated circuit comprising: a photodiode, the photodiode havinga photodiode output; a column line electrically coupled to thephotodiode; a transfer transistor electrically coupled to the photodiodeand to the column line, the transfer transistor being between thephotodiode output and the column line; a first reset transistorelectrically coupled to the photodiode and to the column line at a firstnode, the first node being between the transfer transistor and thecolumn line; a second reset transistor electrically coupled to thephotodiode and to the column line at a second node, the second nodebeing between the first node and the column line; a source followertransistor electrically coupled to the photodiode and to the columnline, the source follower transistor being between the second node andthe column line; and a level shifter electrically coupled to thephotodiode and to the column line, the level shifter being between thefirst node and the second node.
 2. The integrated circuit of claim 1,wherein the level shifter comprises a capacitor.
 3. The integratedcircuit of claim 2, wherein the capacitor is a metal-oxide-metalcapacitor.
 4. The integrated circuit of claim 2, wherein the capacitoris a metal-insulator-metal capacitor.
 5. The integrated circuit of claim2, wherein the source follower transistor comprises a first gate havinga first oxide thickness, the transfer transistor comprises a second gatehaving a second oxide thickness, the first reset transistor comprises athird gate having a third oxide thickness, and the first oxide thicknessof the first gate is less than the second oxide thickness of the secondgate and the third oxide thickness of the third gate.
 6. The integratedcircuit of claim 2, further comprising: a first substrate; and a secondsubstrate separate from the first substrate, wherein the photodiode ison the first substrate and the source follower transistor is on thesecond substrate.
 7. The integrated circuit of claim 6, wherein theintegrated circuit further comprises: a first electrode proximate afirst edge of the first substrate; and a second electrode proximate asecond edge of the second substrate, wherein the photodiode on the firstsubstrate and the source follower transistor on the second substrate areelectrically coupled by way of the first electrode and the secondelectrode.
 8. The integrated circuit of claim 7, wherein the capacitoris formed by the first electrode and the second electrode, and acapacitance of the capacitor is based, at least in part, on a distancebetween the first electrode and the second electrode.
 9. The integratedcircuit of claim 8, wherein the first substrate is bonded to the secondsubstrate at a bonding boundary, the first electrode is proximate thebonding boundary, the second electrode is proximate the bondingboundary, and the capacitor is formed at the bonding boundary.
 10. Theintegrated circuit of claim 6, wherein the second reset transistor is onthe second substrate.
 11. The integrated circuit of claim 10, whereinthe source follower transistor and the second reset transistor are PMOStransistors.
 12. The integrated circuit of claim 11, wherein the firstreset transistor is on the second substrate.
 13. The integrated circuitof claim 10, wherein the capacitor is on the second substrate.
 14. Theintegrated circuit of claim 6, wherein the first substrate is over thesecond substrate.
 15. An image sensor comprising: a first substrate; asecond substrate; a photodiode on the first substrate, the photodiodehaving a photodiode output; a column line electrically coupled to thephotodiode; a first transistor electrically coupled to the photodiodeand to the column line, the first transistor being between thephotodiode output and the column line; a second transistor electricallycoupled to the photodiode and to the column line at a first node, thefirst node being between the first transistor and the column line; athird transistor electrically coupled to the photodiode and to thecolumn line at a second node, the second node being between the firstnode and the column line; a fourth transistor on the second substrateand electrically coupled to the photodiode and to the column line, thefourth transistor being between the second node and the column line; anda capacitor electrically coupled to the photodiode and to the columnline, the capacitor being between the first node and the second node.16. The image sensor of claim 15, wherein the capacitor is ametal-oxide-metal capacitor.
 17. The image sensor of claim 15, whereinthe capacitor is a metal-insulator-metal capacitor.
 18. The image sensorof claim 15, further comprising: a first electrode proximate a firstedge of the first substrate; and a second electrode proximate a secondedge of the second substrate, wherein the photodiode on the firstsubstrate and the fourth transistor on the second substrate areelectrically coupled by way of the first electrode and the secondelectrode.
 19. The image sensor of claim 18, wherein the capacitor isformed by the first electrode and the second electrode, and acapacitance of the capacitor is based, at least in part, on a distancebetween the first electrode and the second electrode.
 20. A method offorming an image sensor, the method comprising: forming a photodiode,the photodiode having a photodiode output; forming a column lineelectrically coupled to the photodiode; forming a transfer transistorelectrically coupled to the photodiode and to the column line, thetransfer transistor being between the photodiode output and the columnline; forming a first reset transistor electrically coupled to thephotodiode and to the column line at a first node, the first node beingbetween the transfer transistor and the column line; forming a secondreset transistor electrically coupled to the photodiode and to thecolumn line at a second node, the second node being between the firstnode and the column line; forming a source follower transistorelectrically coupled to the photodiode and to the column line, thesource follower transistor being between the second node and the columnline; and forming a level shifter electrically coupled to the photodiodeand to the column line, the level shifter being between the first nodeand the second node.